| PART |
Description |
Maker |
| IBM0418A81QLAB IBM0418A41QLAB |
8Mb (512 x 18) SRAM(8M( 512x 18 ) 同步流水线式高性能CMOS静态RAM)
4Mb (256K x 18) SRAM(4M( 256Kx 18) 同步流水线式高性能CMOS静态RAM)
|
IBM Microeletronics
|
| R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 |
4M High Speed SRAM (256-kword x 16-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
SRAM
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
|
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| AS7C164 AS7C164-20 AS7C164-20JC AS7C164-12 AS7C164 |
8K X 8 STANDARD SRAM, 12 ns, PDSO28
SRAM - 5V Fast Asynchronous
5V 8K X 8 CMOS SRAM
|
ALSC[Alliance Semiconductor Corporation]
|
| GS74108AX-7 GS74108AX-7I GS74108AJ-7I GS74108ATP-1 |
7ns 512K x 8 4Mb asynchronous SRAM
10ns 512K x 8 4Mb asynchronous SRAM
|
GSI Technology
|
| HM6216255HCLTT-12 HM6216255HCTT-12 HM6216255HCJP-1 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| HM621400HCJP-12 HM621400HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| M68AW256DL70ZB6T M68AW256DL70ZB1T M68AW256DL55ND1T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位256K × 16.0V异步SRAM
|
意法半导
STMicroelectronics N.V.
|
| MCM6323AYJ10 MCM6323AYJ10R SCM6323AYJ10A SCM6323AY |
64K X 16 bit 3,3V asynchronous fast static RAM
ER 3C 3#12 PIN PLUG RoHS Compliant: No
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
