| PART |
Description |
Maker |
| 2SJ325 2SJ325-Z-E2 2SJ325-Z-E2JM 2SJ325-Z-T1 2SJ32 |
P-channel enhancement type
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-252VAR
|
NEC Corp.
|
| FDD6680AS FDD6680AS08 |
30V N-Channel PowerTrench? SyncFET?/a>
30V N-Channel PowerTrench垄莽 SyncFET垄芒
30V N-Channel PowerTrench㈢ SyncFET⑩
|
Fairchild Semiconductor
|
| FDB6676S FDP6676S FDB6676SS62Z |
76 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From old datasheet system
30V N-Channel PowerTrench SyncFET™
30V N-Channel PowerTrench SyncFET⑩
30V N-Channel PowerTrench SyncFET TM
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| RJK03M0DPA RJK03M0DPA-00-J5A |
30V, 65A, 1.9mΩmax N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| RJK03M5DPA-00-J5A |
30V, 30A, 6.5mmax.N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| 2SK2731 A5800299 |
Transistors > MOS FET > Small Signal MOS FET
From old datasheet system
Interface and switching (30V, 200mA)
Interface and switching (30V/ 200mA)
|
ROHM[Rohm]
|
| RJK0305DPB-02-15 |
30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FDB887010 FDB8870F085 FDB8870-F085 |
30V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 30V, 160A, 3.9mΩ
|
Fairchild Semiconductor
|
| RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
