| PART |
Description |
Maker |
| 2N6576 |
15 AMPERE NPN DARLINGTON POWER TRAN
|
General Semiconductor
|
| MBRP40030CTL MBRP40030CTL-D |
Low VF Schottky Barrier Power Rectifier(400A,30V,VF肖特基势垒功率整流器)
POWERTAP-TM II SWITCHMODE-TM Power Rectifier
400A 30V Schottky Rectifier
POWERTAP II SWITCHMODE Power Rectifier
|
ONSEMI[ON Semiconductor]
|
| 400UR80D 400U120D 400U160D 400U80D 400UR120D 400UR |
1200V 400A Std. Recovery Diode in a DO-205AB (DO-9)package
1600V 400A Std. Recovery Diode in a DO-205AB (DO-9)package
800V 400A Std. Recovery Diode in a DO-205AB (DO-9)package
STANDARD RECOVERY DIODES
|
IRF[International Rectifier]
|
| NESG3031M05 NESG3031M05-T1 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| APT6017WVR |
POWER MOS V 600V 31.5A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT8065 APT8065AVR |
POWER MOS V 800V 11.5A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8065BVR APT8065 APT8065AVR |
POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT20M45BVR |
POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10M07JVR APT10M07 |
POWER MOS V 100V 225A 0.007 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT50M50JVFR |
POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8030B2VR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
