PART |
Description |
Maker |
X28HC256PI X28HC256DI-15C7871 |
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-PDIP 32K X 8 EEPROM 5V, PDIP28 256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-CerDIP 32K X 8 EEPROM 5V, 150 ns, PDSO28
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Intersil, Corp.
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AT28C256-20UM/883 AT28C256F-20UM/883 AT28C256E-20U |
150NS, TSOP, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 150 ns, PDSO28 256K (32K x 8) Paged Parallel EEPROM
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聚兴科技股份有限公司 ATM Electronic, Corp. ATMEL Corporation
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HN58V256AI |
256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k×8)
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Hitachi,Ltd.
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CAT28C256NA-15T CAT28C256NA-12T CAT28C256NI-15T CA |
256K-Bit Parallel EEPROM 256 kb Parallel EEPROM 32K X 8 EEPROM 5V, 120 ns, PQCC32
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http:// ON Semiconductor
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28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
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Turbo IC
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CAT24WC32XE-1.8TE13D CAT24WC64GWATE13B CAT24WC32PE |
32K/64K-Bit I2C Serial CMOS EEPROM 32K/64K-Bit I2C串行CMOS EEPROM
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TE Connectivity, Ltd. Glenair, Inc. Austin Semiconductor, Inc Micron Technology, Inc. M.S. Kennedy, Corp. AND Displays / Purdy Electronics
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CY7C199CN-20ZXIT CY7C199CNL-15VC CY7C199CN-20ZI CY |
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.5 to 5.5 V; 32K X 8 STANDARD SRAM, 20 ns, PDSO28 256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28 256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28 256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
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Cypress Semiconductor, Corp.
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HN58X2464TIE HN58X2464FPIE HN58X2464I |
Two-wire serial interface 8k EEPROM (1-kword 】 8-bit)/16k EEPROM (2-kword 】 8-bit) 32k EEPROM (4-kword 】 8-bit)/64k EEPROM (8-kword 】 8-bit)
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Renesas Electronics Corporation
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SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C FLUKE-741B 120 REFURBISHED BY NEWARK KJA 79C 79#22 PIN RECP 128Kx8 EEPROM PSoC® Mixed-Signal Array 2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8)页模式的EEPROM 2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8)页模式EEPROM DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8)页模式的EEPROM IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32 2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8)页模式的EEPROM 2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8)页模式EEPROM
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Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
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IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位) Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28 Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位) CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28 Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28 CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28 Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70 Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70 1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85 Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75 CMOS Static RAM 256k ( 32k X 8-bit )
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INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Technology, Inc. IDT[Integrated Device Technology] Integrated Device Technolog...
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HN58X2408TIE HN58X2416TIE HN58X2464TIE HN58X2464FP |
Memory>EEPROM>Serial EEPROM Two-wire serial interface 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit) Two-wire serial interface 8k EEPROM (1-kword 隆驴 8-bit)/16k EEPROM (2-kword 隆驴 8-bit) 32k EEPROM (4-kword 隆驴 8-bit)/64k EEPROM (8-kword 隆驴 8-bit)
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http:// Renesas Electronics Corporation
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