| PART |
Description |
Maker |
| IS42S16100 IS42S16100-7T |
512K Words x 16 Bits x 2 Banks (16-MBIT)
SYNCHRONOUS DYNAMIC RAM
|
ICS
|
| IS42S16100E-6TL IS42S16100E-6BLI IS42S16100E-6TLI |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42VS16100C1-10T IS42VS16100C1-10TI IS42VS16100C1 |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42VS16100C1-10TI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
| IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
| HY57V281620HCTP-H |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
|
Hynix Semiconductor
|
| HY62LF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16806B-I HY62SF16806B-C |
High speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
| K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS42S16400 IS42S8800 IS42S8800L IS42S16400L |
2(1)M words x 8(16) bits x 4 banks (64-mbit) synchronous dynamic ram
|
ICSI[Integrated Circuit Solution Inc]
|
