PART |
Description |
Maker |
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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AS5C2568 AS5C2568DJ-20_XT AS5C2568DJ-12_883C AS5C2 |
SRAM 32K x 8 SRAM SRAM MEMORY ARRAY SRAM 静态存储器
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ETC AUSTIN[Austin Semiconductor] Electronic Theatre Controls, Inc.
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R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
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Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 2-word Burst
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Renesas Technology / Hitachi Semiconductor
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IS61NVP102436A IS61NVP102436A-166B3 IS61NVP102436A |
1Mb x 36 and 2Mb x 18 STATE BUS SRAM 1M X 36 STANDARD SRAM, PBGA165 PLASTIC, BGA-165 1M X 36 STANDARD SRAM, PDSO100 TQFP-100 2M X 18 STANDARD SRAM, PBGA165
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Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC Integrated Silicon Solu...
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M48T08 M48T0807 M48T08Y M48T18 |
64Kb (8K x 8) TIMEKEEPER SRAM(64KTIMEKEEPER SRAM) 64Kb的(8K的8)计时器的SRAM4K的位计时器的SRAM 5V, 64Kbit (8 Kb x 8) TIMEKEEPER? SRAM 5V, 64Kbit (8 Kb x 8) TIMEKEEPER庐 SRAM
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STMicroelectronics N.V. 意法半导
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UPD4382362GF-A75B UPD4382322GF-A75B UPD4382182GF-A |
x18 Fast Synchronous SRAM x16 Fast Synchronous SRAM x16快速同步SRAM x36 Fast Synchronous SRAM x36快速同步SRAM x32 Fast Synchronous SRAM X32号,快速同步SRAM
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Electronic Theatre Controls, Inc.
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74F212SCQR 74F212L1CQR 54F212L1MQB 54F212DMQB 74F2 |
16 X 9 STANDARD SRAM, 28 ns, PDSO20 16 X 9 STANDARD SRAM, 28 ns, CQCC20 16 X 9 STANDARD SRAM, 28 ns, CDIP20 16 X 9 STANDARD SRAM, 28 ns, PQCC20
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FAIRCHILD SEMICONDUCTOR CORP
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AS7C33128FT32_36B AS7C33128FT36B-80TQIN AS7C33128F |
3.3V 128K x 32/36 Flow Through Synchronous SRAM 3.3 128K的x 32/36流通过同步SRAM 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 8 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 6.5 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 6.5 ns, PQFP100 128K X 32 STANDARD SRAM, 10 ns, PQFP100 14 X 20 MM, TQFP-100 LM3876 Overture™ Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 3000; Container: Reel LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 1000; Container: Reel Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. Integrated Silicon Solution, Inc. ALSC[Alliance Semiconductor Corporation]
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