PART |
Description |
Maker |
2SK3031TENTATIVE 2SK30ATMR 2SK30ATMGR |
2SK3031 (Tentative) - N-Channel Power F-MOS FET Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 300UA我(直)|92 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 2.6MA我(直)|2
|
KEMET, Corp. Electronic Theatre Controls, Inc.
|
RT8H042C |
This is tentative specification
|
Isahaya Electronics Corporation
|
FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
STK621-031 |
CONNECTOR ACCESSORY TENTATIVE
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
2SA679 2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE)
|
List of Unclassifed Manufacturers ETC[ETC]
|
2SD371 |
SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE)
|
List of Unclassifed Manufacturers
|
2SA493 |
SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS)(TENTATIVE)
|
Unknow
|
2SA839 |
SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE)
|
List of Unclassifed Manufacturers ETC[ETC]
|
TC55VEM316AXBN55 TC55VEM316AXBN TC55VEM316AXBN40 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TC55VCM216ASTN40 TC55VCM216ASTN55 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
HUF76407D3 HUF76407D3S HUF76407D3ST |
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET 11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
IRFIZ34N-004 IRFIZ46N-002 IRFIZ46N-029 IRFIZ46N-02 |
19 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 31 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 13 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 28 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 2.1 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 21 A, 60 V, 0.042 ohm, N-CHANNE 28 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 4.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. JST Mfg. Co., Ltd. Vishay Intertechnology, Inc. Austin Semiconductor, Inc
|
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