| PART |
Description |
Maker |
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61LV12824 21_61LV12824 IS61LV12824-9B |
9ns; 3.3V; 128K x 24 high-speed CMOS CMOS static RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
|
ICSI
|
| HM-6564202 HM4-65642B_883 HM1-65642_883 HM1-65642B |
RAM, Asynchronous CMOS, 8Kx8, Access Time 150ns, 75-250A
8K x 8 Asynchronous CMOS Static RAM
|
INTERSIL[Intersil Corporation]
|
| IC62C1024 IC62C1024-35TI IC62C1024-35W IC62C1024-3 |
128K X 8 HIGH SPEED CMOS STATIC RAM
128K X 8 HIGH SPEED CMOS STATIC RAM 128K的乘八高速CMOS静态RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
55ns; 5V; 128K x 8 high-speed CMOS static RAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| TC55V16648BBFT-10 TC55V16648BBFT-12 TC55V16648BBFT |
65,536-WORD BY 16-BIT CMOS STATIC RAM 65,536字由16位的CMOS静态RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| W26020A W26020A-20 W26020A-25 W26020AT-20 W26020AT |
128K X 16 High Speed CMOS Static RAM
128K x 16 HIGH-SPEED CMOS STATIC RAM
From old datasheet system
128K×16bit High-Speed CMOS Static RAM(128K×16位高速CMOS静态RAM) 128K的16位高速CMOS静态RAM28K的16位高速的CMOS静态RAM）的
128K X 16 High Speed CMOS Static RAM 128K的16高速CMOS静态RAM
|
WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM
(TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| M3062AFCVGP M30626FHPFP M30626FHPGP M30627FHPGP M3 |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K 4K bytes, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K 4K bytes, RAM capacity = 31K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 256K 4K bytes, RAM capacity = 20K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 96K bytes, RAM capacity = 5K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 64K bytes, RAM capacity = 4K bytes
Single-chip 16-bit CMOS microcomputer, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K 4K bytes, RAM capacity = 10K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 64K 4K bytes, RAM capacity = 4K bytes,
Single-chip 16-bit CMOS microcomputer, RAM capacity = 4K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 512K 4K bytes, RAM capacity = 31K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 16K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 24K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 31K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 31K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 24K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 16K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K bytes, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 256K bytes, RAM capacity = 20K bytes
|
Renesas
|
| IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
|
| TC551402J TC551402J-22 TC551402J-25 |
(TC551402J-22/-25) CMOS STATIC RAM
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| GLT725608-15TS GLT725608-20TS GLT725608 GLT725608- |
15ns; Ultra high performance 32K x 8 CMOS static RAM
12ns; Ultra high performance 32K x 8 CMOS static RAM
Ultra High Performance 32K x 8 Bit CMOS STATIC RAM 32K的超高性能× 8位CMOS静态RAM
|
G-LINK Technology
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
