| PART |
Description |
Maker |
| DS1650Y-70-IND DS1650Y-100-IND DS1650Y-85-IND DS16 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Bourns, Inc.
Maxim Integrated Products, Inc.
|
| DS1330ABL-70-IND DS1330ABL-100-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| M48Z512A-70PM1NBSP M48Z512A-70PM1 |
NVRAM (Battery Based)
From old datasheet system
|
ST Microelectronics
|
| U632H64BDC45 U632H64BD1C45 U632H64BSC45 U632H64DC4 |
Precision single operational amplifier
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Glenair, Inc.
|
| DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中（基于电池
64K Nonvolatile SRAM
IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| MR44V064A |
64k(8,192-Word ?8-Bit) FeRAM (Ferroelectric Random Access Memory)
|
LAPIS Semiconductor Co....
|
| MR44V064B |
64k(8,192-Word × 8-Bit) FeRAM (Ferroelectric Random Access Memory) I2C
|
LAPIS Semiconductor Co....
|
| MB85R256PFTN MB85R256PF MB85R256 |
Memory FRAM(Ferroelectric Random Access Memory)
|
Fuji Electric
Fujitsu Component Limited.
|
| STK10C68-L45M STK10C68-L55M |
NVRAM (EEPROM Based)
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| DS2217-120 DS2217-150 |
NVRAM(BatteryBased)
|
|
| M40SZ100WMQ6F |
3 V NVRAM supervisor for LPSRAM
|
ST Microelectronics
|
