| PART |
Description |
Maker |
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| PC28F128J3A PC28F128J3C |
StrataFlash Memory
|
Intel Corporation
|
| 28F128J3A 28F320J3A |
(28FxxxJ3A) Intel StrataFlash Memory
|
Intel Corporation
|
| TE28F640P30B85 TE28F640P30T85 TE28F128P30XXX RC28F |
Intel StrataFlash Embedded Memory
|
INTEL[Intel Corporation]
|
| GE28F640K18 GE28F640K3 |
(GE28FxxxKx) Intel StrataFlash Memory (J3)
|
Intel Corporation
|
| PF48F4400M0Y0T0 |
Numonyx StrataFlash Wireless Memory
|
Numonyx B.V
|
| PC28F256G18AF PC28F256G18AE PC28F128G18FF PC28F00A |
128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
|
Micron Technology
|
| GE28F640L30B85 GE28F640L30T85 GE28F256L30B85 |
1.8 Volt Intel StrataFlash?? Wireless Memory with 3.0-Volt I/O (L30)
|
INTEL CORP
|
| JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
| TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL T |
65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
