| PART |
Description |
Maker |
| SCS220AE2 SCS120AE2 SCS220AE2C |
Switching loss reduced, enabling high-speed switching . (3-pin package)
SiC Schottky Barrier Diode
|
ROHM
|
| GD511 |
SURFACE MOUNT,SWITCHING DIODE
The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time
|
GTM CORPORATION
E-Tech Electronics LTD
|
| 2SC4942-15 |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
|
Renesas Electronics Corporation
|
| 2SC3307 E000825 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
From old datasheet system
HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS
|
Toshiba Semiconductor
|
| IKP20N65F5 |
high power thyristor diode
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| 2SK182507 2SK1825 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
|
Toshiba Semiconductor
|
| RJK1525DPS-00-T2 RJK1525DPS10 RJK1525DPS |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N1503P-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| DA2JF8100L |
Silicon epitaxial planar type For high speed switching circuits
|
Panasonic Battery Group
|
| RJL60S5DPP-E0 RJL60S5DPP-E0T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| Q62702-A1046 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high speed switching)
|
Siemens Semiconductor G...
|
