| PART |
Description |
Maker |
| KBE00S003M KBE00S003M-D411 |
1Gb NAND*2 256Mb Mobile SDRAM*2
|
Samsung Electronic
|
| KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW |
32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
|
SPANSION LLC
Spansion, Inc.
|
| HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283 |
1GB PC133 (2-2-2) 2-bank available 2Q02
512MB PC133 (3-3-3) 1-bank
POT 100 OHM 3/8 SQ CERM SL ST
2GB PC133 (3-3-3) 2-bank available 4Q02
256MB PC133 (3-3-3) 1-bank End-of-Life
512MB PC100 (2-2-2) 1-bank End-of-Life
1GB PC133 (3-3-3) 2-bank End-of-Life
2GB PC133 (2-2-2) 2-bank available 4Q02
PC133 Registered SDRAM-Modules PC133的SDRAM的注册模
1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的（3-3-3银行提供待定
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Infineon Technologies AG
Infineon Technologies A...
|
| NT6TM64M16CI-G0 NT6TM128M16CI-G0 NT6TN16M16CI-G0 N |
Commercial Mobile DDR 1Gb SDRAM
|
Nanya Technology Corpor...
|
| W948D2FBJX5E W948D2FBJX5I W948D2FBJX6E W948D2FBJX6 |
256Mb Mobile LPDDR
|
Winbond
|
| H5MS2562JFR-E3M H5MS2562JFR-J3M H5MS2562JFR-K3M H5 |
256Mb (16Mx16bit) Mobile DDR SDRAM
|
Hynix Semiconductor
|
| H5MS2622JFR H5MS2532JFR |
256Mb (8Mx32bit) Mobile DDR SDRAM
|
Hynix Semiconductor
http://
|
| MT29C4G48MAPLCCA-6IT MT29C4G48MAPLCJQ-6IT MT29C2G2 |
NAND Flash and Mobile LPDRAM
|
Micron Technology
|
