| PART |
Description |
Maker |
| VID25-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| MID100-12A3 MII100-12A3 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS Corporation
|
| TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| 2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
| SKM145GB124DN SKM145GAL124DN |
Low Loss IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| 2ED300C17-ST |
Dual IGBT Driver Board For Infineon Medium and High Power IGBT Modules
|
Infineon Technologies AG
|
| CY25AAJ-8 CY25AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Nch IGBT for STROBE FLASHER
|
Mitsubishi Electric Corporation
POWEREX [Powerex Power Semiconductors]
POWEREX[Powerex Power Semiconductors]
|
| SEMIX553GAR128DS09 SEMIX553GAR128DS-09 |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX303GB12E4S |
Trench IGBT Modules
466 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX202GB128DS08 |
SPT IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
http://
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
