| PART |
Description |
Maker |
| W982516BH-75 W982516BH-75I W982516BH-75L |
Industrial SDRAM
Low Power SDRAM
4M X 4 BANKS X 16 BIT SDRAM
|
Winbond Electronics
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| HB52F328DC-75BL |
256 MB Unbuffered SDRAM S.O.DIMM 32-Mword × 64-bit, 133 MHz Memory Bus, 2-Bank Module (8 pcs of 16 M × 16 components) PC133 SDRAM
x64 SDRAM Module X64的内存模
|
Elpida Memory
Vishay Intertechnology, Inc.
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| HY57V561620HLT HY57V561620HT-H |
x16 SDRAM
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix
|
| K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| ST62P20CM3/XXX ST62P10CM6/XXX ST62P10CM1/XXX ST62P |
8-BIT MICROCONTROLLER
IC, SDRAM, DDR400, 16MEGX16
1GB DDR SDRAM SODIMM 8位微控制
|
Exar, Corp.
|
| GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 32x8 SDRAM
184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| W986408CH-8H W986408CH-75 W986408CH |
2M x 8BIT x 4 BANKS SDRAM
x8 SDRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
http://
Winbond Electronics, Corp.
Winbond Electronics Corp
|
