PART |
Description |
Maker |
EM481M1622VTC-6F EM481M1622VTC-6FE EM481M1622VTC-7 |
16Mb (512K隆驴2Bank隆驴16) Synchronous DRAM 16Mb (512K×2Bank×16) Synchronous DRAM
|
Eorex Corporation
|
VG3617161ET-8 VG3617161ET-7 |
CMOS Synchronous Dynamic RAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
Vanguard International Semiconductor Corporation Vanguard International Semiconductor, Corp.
|
MB8502S064AF-100 MB8502S064AF-84 MB8502S064AF-67 |
CMOS 2M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 2M×64同步动态RAM) CMOS 2M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 2M×64同步动态RAM) 的CMOS 200万64位同步动态随机存取存储器(SDRAM)的CMOS00万64位同步动态RAM)的
|
Fujitsu Limited Fujitsu, Ltd.
|
MB8501S064AD-100 |
CMOS 1M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 1M×64位同步动态RAM)
|
Fujitsu Limited
|
VG36643241BT-10 VG36643241BT-7 VG3664321412BT VG36 |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
VG36128161BT VG36128401BT VG36128801BT |
CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
VG36646141BT-8 |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
HY57V161610FTP-XX HY57V161610FT-XX HY57V161610FT-5 |
16M SDRAM 16Mb Synchronous DRAM
|
Hynix Semiconductor
|
KMM53632004BK |
32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
|
Samsung Semiconductor
|
MSC23S4721E-8BS18 MSC23S4721E |
4,194,304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): 4194304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): From old datasheet system 4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字2位同步动态RAM模块) 4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字72位同步动态RAM模块)
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OKI electronic componet... OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
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