| PART |
Description |
Maker |
| AN1438 |
LOW NOISE AMPLIFIER OPTIMIZED FOR MINIMUM NOISE FIGURE AT 1.9GHZ USING START420
|
SGS Thomson Microelectronics
|
| NE71083-07 NE710 NE71000 NE71083-06 NE71083-08 NE7 |
90 GHz, low noise Ku-K band GaAs MESFET
LOW NOISE Ku-K BAND GaAs MESFET 低噪声谷K波段GaAs MESFET器件
|
NEC Corp.
NEC, Corp.
|
| CFA0103 CFA010306 CFA0103-L1 |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Low Noise GaAs FETs
|
MIMIX BROADBAND INC
|
| NJG1552F NJG1552F-C1 NJG1552F-C2 NJG1552F-C3 NJG15 |
1.5ghZ/1.9ghZ mixer gAaS mmic
|
NJRC[New Japan Radio]
|
| NJG1714KC1 |
1.9GHz BAND FRONT-END GaAs MMIC
|
New Japan Radio
|
| NJG1709KC1 NJG1709KC1-C1 NJG1709KC1-C10 NJG1709KC1 |
1.5/1.9GHz BAND FRONT-END GaAs MMIC
|
NJRC[New Japan Radio]
|
| NJG1709KC1-L4 NJG1709KC1-L6 NJG1709KC1-C7 NJG1709K |
1.5/1.9GHz BAND FRONT-END GaAs MMIC 1.5/1.9GHz频前端砷化镓微波单片集成电路
|
New Japan Radio Co., Ltd.
|
| TC3911 |
Low-Cost Single-Bias Low Noise PHEMT GaAs FETs
|
Transcom, Inc.
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| MGF1303B97 MGF1303B |
LOW NOISE GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF4936AM |
Low Noise GaAs HEMT
|
Mitsubishi Electric Semiconductor
|
