| PART |
Description |
Maker |
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M36DR432AD M36DR432AD10ZA6T M36DR432AD12ZA6T M36DR |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M28R400CT100D16 M28R400CT-KGD M28R400CB100D16 M28R |
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 已知良品裸片4兆位56Kb的x16插槽，引导块.8V电源快闪记忆
KNOWN GOOD DIE 4 MBIT (256KB X16) 1.8V SUPPLY FLASH MEMORY
|
STMicroelectronics N.V.
http://
ST Microelectronics
|
| M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27C320 6185 M27C320-80N1 M27C320-100M1 M27C320-10 |
From old datasheet system
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM 32兆位4Mb的x8或检察官办公室的2Mb x16存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27C4002 M27C4002-10B1TR M27C4002-10B1X M27C4002-1 |
Fuses, 750mA 63V T CHIP 1206
Fuses, 5A 125V F CHIP 0603 4兆位存储器的256Kb x16紫外线和OTP存储
4 Mbit 256Kb x16 UV EPROM and OTP EPROM 4兆位存储器的256Kb x16紫外线和OTP存储
CAP 18PF 100V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1500PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1800PF 100V 20% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1800PF 200V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1500PF 50V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1800PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1500PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 1500PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 0.015UF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 16PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 150PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
From old datasheet system
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W416TG 9175 M36W416TGZA M36W416BG70ZA1T M36W416 |
From old datasheet system
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27V160-120B1 M27V160-120B6 M27V160-120F1 M27V160- |
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics
|
| M27C32206 M27C322 M27C322-80F3 M27C322-80F1 M27C32 |
32 Mbit (2Mb x16) UV EPROM and OTP EPROM
|
STMicroelectronics
|
| M27C322 |
32 MBIT (2MB X16) UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M27C160-100F1 M27C160-100F6 M27C160-50F1 M27C160-5 |
16 MBIT (2MB X8 OR 1MB X16) UV EPROM AND OTP EPROM
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
