| PART |
Description |
Maker |
| MRF9002NR2 |
RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET
|
Freescale Semiconductor, Inc
|
| LB1212 LB1213 LB1216 LB1214 LB1211 LB1217 LB1215 L |
General Purpose Transistor Array
From old datasheet system
Generral-Purpose Transistor Array
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| AP0130 AP0130NA AP0130NB AP0130ND AP0132ND AP0132N |
ER 7C 7#16S PIN RECP
AB 5C 5#12 PIN RECP
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 320 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 8通道阵列单片功率MOSFET N沟道增强模式
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 160 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 300 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 200 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
AB 5C 5#12 SKT RECP 8通道阵列单片功率MOSFET N沟道增强模式
|
SUTEX[Supertex Inc]
Supertex Inc
SUTEX[Supertex, Inc]
Supertex, Inc.
|
| IRFP040 IRF9622 IRF9612 IRFP362 IRFP343 |
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.4A I(D) | TO-247AC
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.5A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 1.5AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 900MA I(D) | TO-220AB
TRANSISTOR|MOSFET|P-CHANNEL|200VV(BR)DSS|1.5AI(D)|TO-220AB
TRANSISTOR|MOSFET|N-CHANNEL|50VV(BR)DSS|40AI(D)|TO-247AC
|
International Rectifier, Corp.
|
| CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat)
NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters
NPN/PNP Transistor Arrays
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
| UPA1601 UPA1601GS UPA1601CX |
Power MOS FET array
UPA1601DataSheet|DataSheet[03/1994]
MONOLITHIC POWER MOSFET ARRAY
|
NEC
|
| ALD1116DA ALD1106SB ALD1106DB ALD1106 ALD1106PB AL |
QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:22-35 RoHS Compliant: No
TRANS NPN 40VCEO 10A TO-220F 双N沟道MOSFET的阵列匹
QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY 双N沟道MOSFET的阵列匹
|
ALD[Advanced Linear Devices]
Advanced Linear Devices, Inc.
|
| PE84140_06 84140-00 84140-01 84140-02 PE84140 PE84 |
Ultra-High Linearity Broadband Quad MOSFET Array 0 MHz - RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array
|
Peregrine Semiconductor, Corp.
PEREGRINE[Peregrine Semiconductor Corp.]
|
| UPA1552H |
MOS FIELD EFFECT POWER TRANSISTOR ARRAY (FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY)
|
NEC
|
| CTA2N1P-7-F |
COMPLEX TRANSISTOR ARRAY 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Inc.
Diodes, Inc.
|
| MC3356 MC3346 MC3346D MC3356P |
GENERAL PURPOSE TRANSISTOR ARRAY ONE DIFFERENTIALLY CONNECTED PAIR AND THREE ISOIATED TRANSISTOR ARRAYS
|
MOTOROLA[Motorola, Inc]
|
| LB1275 |
7-Unit, Darlington Transistor Array
7-Unit Darlington Transistor Array
7-Unit,Darlington Transistor Array(7单元达林顿晶体管阵列)
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
