| PART |
Description |
Maker |
| RFK35N10 RFK35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| MRF21125S MRF21125 MRF21125SR3 |
RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| MRF18060AL MRF18060A MRF18060ALR3 MRF18060ALSR3 |
RF Power Field Effect Transistors
1805?1880 MHz, 60 W, 26 V Lateral N?Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
Motorola Semiconductor Products
|
| MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3 |
2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MRF373ASR1 MRF373AR1 MRF373A |
MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
MOTOROLA [Motorola, Inc]
|
| APTGT100A60T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT75A60T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT50DA170T1G |
Boost chopper Trench Field Stop IGBT? Power Module
Boost chopper Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
