| PART |
Description |
Maker |
| HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb
SWITCH, REED SPST-NO 10W SMD
QSW-REED,10MM,10W,SMD
9 POS FR-4 SIP SOCKET
x8|3V|70/85/100|Low Power Slow SRAM - 256K
x8|3.3V|70/85/100|Low Power Slow SRAM - 256K
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
x8 SRAM x8的SRAM
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Analog Devices, Inc.
Panasonic Industrial Solutions
|
| CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33- |
IC, SDRAM, 64M BIT, 512KX4X32 BIT,3.3V,10NS,100MHZ,TSOP-86
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 7.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PBGA165
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 6.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 2M X 36 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM
2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM)
2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation
SEMICOA[Semicoa Semiconductor]
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| BS616UV2019AI85 BS616UV2019TI85 |
Ultra Low Power CMOS SRAM 128K X 16 bit 超低功耗CMOS SRAM 128K的16
|
BRILLIANCE SEMICONDUCTOR, Inc.
|
| UC62WV0256EI-70 UC62WV0256 UC62WV0256-35 UC62WV025 |
Low Power CMOS SRAM 32K X8 Bits 低功CMOS SRAM 32K的X8
From old datasheet system
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 23A256-E/P 23A256-E/SN 23A256-E/ST 23K256-E/P 23K2 |
256K SPI Bus Low-Power Serial SRAM
32K X 8 STANDARD SRAM, PDSO8
|
Microchip Technology
|
| UT6264CPC- UT6264CSC- UT6264CSC-70LL UT6264CSC-70L |
8K X 8 BIT LOW POWER CMOS SRAM 8K的8位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
N.A.
ETC[ETC]
UTRON Technology
|
| UC62LV1024KI-70 UC62LV1024 UC62LV1024AC-55 UC62LV1 |
Low Power CMOS SRAM 低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| HY62LF16404C |
Super Low Power Slow SRAM - 4Mb
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
