PART |
Description |
Maker |
HM5225165B HM5225165B-75 HM5225165B-A6 HM5225165B- |
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133 PC/100 SDRAM 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
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ELPIDA[Elpida Memory]
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HM5212165FTD-75 HM5212805FTD-75 HM5212165FTD-A60 H |
128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword × 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword 隆驴 16-bit 隆驴 4-bank/4-Mword 隆驴 8-bit 隆驴 4-bank PC/133, PC/100 SDRAM
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Elpida Memory
|
HM5212165FLTD-75 HM5212805FLTD-75 HM5212165FLTD-A6 |
128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword × 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword 隆驴 16-bit 隆驴 4-bank/4-Mword 隆驴 8-bit 隆驴 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory
|
HM5264405FTT-75 HM5264805FTT-75 |
64M LVTTL interface SDRAM 133 MHz/100 MHz
|
http://
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HM5212805FLTD-75 HM5212805FLTD-B60 HM5212805FTD-B6 |
128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM
|
HITACHI[Hitachi Semiconductor]
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HM5212165F HM5212805FLTD-B60 |
128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) 128MLVTTL接口的SDRAM28MLVTTL接口同步的DRAM SYNCHRONOUS DRAM, PDSO54
|
Fairchild Semiconductor, Corp.
|
K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM米16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
EBD21RD4ADNA-E EBD21RD4ADNA-6B-E EBD21RD4ADNA-7A-E |
2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) 256M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
|
ELPIDA MEMORY INC DRAM Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
HY5V56BF HY5V56BL/SF-HI HY5V56BL/SF-SI |
SDRAM - 256Mb 16Mx16|3.3V|8K|H|SDR SDRAM - 256M
|
Hynix Semiconductor
|
V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7PC |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 8ns LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643 |
LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3 LED ORANGE DIFFUSED 2X5 RECT CONNECTOR ACCESSORY LED ORG/RED DIFFUSED 2X5MM RECT -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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