| PART |
Description |
Maker |
| RND0.8ZHH-M6 RND02ZGE-M6 RND02ZGE |
RND Series: 8-10W DC/DC Converters 38-75V Input 3.3V & 5.0V, 2V Dual Outputs 5V, available with trimming RND系列 - 10W的直直流转换8 - 75V输入3.3
INTEGRATED CKT STATIC SENS
RND Series: 8-10W DC/DC Converters 38-75V Input 3.3V & 5.0V, ±12V Dual Outputs ±15V, available with trimming
RND Series: 8-10W DC/DC Converters 38-75V Input 3.3V & 5.0V 12V Dual Outputs 15V available with trimming
RND Series: 8-10W DC/DC Converters 38-75V Input 3.3V & 5.0V, 【12V Dual Outputs 【15V, available with trimming
RND Series: 8-10W DC/DC Converters 38-75V Input 3.3V & 5.0V, ?2V Dual Outputs ?5V, available with trimming
RND Series: 8-10W DC/DC Converters 38-75V Input 3.3V & 5.0V, 2V Dual Outputs 5V, available with trimming
|
AZ Displays, Inc.
Kingbright, Corp.
POWER-ONE[Power-One]
|
| 11-M200 11-M200B-C |
MARK ER CAB LE TIE S
|
Qualtek Electronics Cor...
|
| LC72323-XXXX |
LED RED/AMBR DIFFUSED(WHITE)RND
|
Sanyo Electric Co.,Ltd.
|
| CY7C1298A-100NC GVT7164C18 GVT7164C18Q-5 GVT7164C1 |
Memory : Sync SRAMs
64K x 18 Synchronous Burst RAM Pipelined Output
64K X 18 STANDARD SRAM, 8 ns, PQFP100 PLASTIC, TQFP-100
64K X 18 STANDARD SRAM, 6 ns, PQFP100 PLASTIC, TQFP-100
|
Cypress Semiconductor, Corp.
|
| 2PD601AR 2PD601ASW 2PD601ART/R 2PD601AQ 2PD601AQW |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PLASTIC, SC-59A, TO-236, 3 PIN
NPN general purpose transistors; 50 V, 100 mA
|
NXP Semiconductors N.V.
|
| 0022282038 22-28-2038 |
2.54mm (.100) Pitch KK? Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 3 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating, with Backwalls Removed
2.54mm (.100) Pitch KK庐 Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 3 Circuits, 0.38渭m (15渭) Gold (Au) Selective Plating, with Backwalls Remove
2.54mm (.100) Pitch KK垄莽 Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 3 Circuits, 0.38楼矛m (15楼矛) Gold (Au) Selective Plating, with Backwalls Rem
|
Molex Electronics Ltd.
|
| 0022282026 22-28-2026 |
2.54mm (.100) Pitch KK? Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 2 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating
2.54mm (.100) Pitch KK庐 Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 2 Circuits, 0.76渭m (30渭") Gold (Au) Selective Plating
2.54mm (.100) Pitch KK垄莽 Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 2 Circuits, 0.76楼矛m (30楼矛") Gold (Au) Selective Plating
|
Molex Electronics Ltd.
|
| 0022282032 22-28-2032 |
2.54mm (.100) Pitch KK? Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 3 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating
2.54mm (.100) Pitch KK庐 Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 3 Circuits, 0.38渭m (15渭) Gold (Au) Selective Plating
2.54mm (.100) Pitch KK垄莽 Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 3 Circuits, 0.38楼矛m (15楼矛) Gold (Au) Selective Plating
|
Molex Electronics Ltd.
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| YG912S2R |
LOW LOSS SUPER HIGH SPEED DIODE
POT 500 OHM 1/4 RND CERM SL ST
|
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| UPD703108GC-8EU UPD703108GC-8EU-A |
32-BIT, 40 MHz, RISC MICROCONTROLLER, PQFP100 14 X 14 MM, PLASTIC, LQFP-100
32-BIT, 40 MHz, RISC MICROCONTROLLER, PQFP100 14 X 14 MM, LEAD FREE, PLASTIC, LQFP-100
|
Air Cost Control
NEC, Corp.
|
| BYM11-50 BYM11-800 BYM11-600 BYM11-400 BYM11-100 B |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
Surface Mount Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A
|
Vishay Beyschlag
|
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