| PART |
Description |
Maker |
| MMBT3904 |
200 mA, 40 V NPN Plastic Encapsulated Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| CSC1815GR CSC1815O |
0.400W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.150A Ic, 120 - 240 hFE
|
Continental Device India Limited
|
| CSD794Y CSD794O CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY
|
Continental Device India Limited
|
| CSA1316BL CSC3329GR |
0.400W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 350 - 700 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 200 - 400 hFE
|
Continental Device India Limited
|
| MMBT3904 SMBT3904 SMBT3904U SMBT3904S SMBT390407 |
200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Silicon Switching Transistors
|
Infineon Technologies AG
|
| SLA4041 |
3 A, 200 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Darlington With built-in flywheel diode
|
Sanken electric
|
| SF2N4924 2N4924 SF_2N4924 2N6462 |
Bipolar NPN Device 200 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| 2N4123RLRM 2N412308 |
General Purpose Transistors NPN Silicon 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
| BFT57 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package 200 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
|
TT electronics Semelab, Ltd.
|
| BYW99PI-200RG |
15 A, 200 V, SILICON, RECTIFIER DIODE PLASTIC, TOP3I, 3 PIN
|
ST Microelectronics
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
|
