PART |
Description |
Maker |
BSP92P |
Low Voltage MOSFETs - Small Signal MOSFET, -250V, SOT-223, RDSon = 12 SIPMOS Small-Signal-Transistor
|
Infineon Technologies AG
|
BSP295 |
Low Voltage MOSFETs - N-Channel SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
BSP613P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.13
|
Infineon
|
BSS131 |
Low Voltage MOSFETs - Small Signal MOSFET, 240V, SOT-23, RDSon=16.0 Ohm, 0.1A, LL
|
Infineon
|
SN7002W |
SIPMOS Small-Signal-Transistor Low Voltage MOSFETs - SOT323, 60V, 5Ohm, 0.23A
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSS138N |
Low Voltage MOSFETs - SOT23, 60V, 3.5Ohm, 0.23A SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSP297 |
Low Voltage MOSFETs - Small Signal MOSFET, 200V, SOT-223, RDSon=2.0 Ohm, 0.65A, LL
|
Infineon
|
BSO303P BSO303 |
OptiMOS -P Small-Signal-Transistor Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSO200P03S |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8, Ron = 20m OptiMOS-P Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
MGSF3441XT1-D |
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
ON Semiconductor
|