| PART |
Description |
Maker |
| MCM63R736 |
4M Late Write HSTL
From old datasheet system
|
Motorola
|
| MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL
ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| HM64YLB36512BP-33 HM64YLB36512BP-28 HM64YLB36512-1 |
512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|
| CXK77B1840AGB CXK77B3640AGB |
4Mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization)
From old datasheet system
|
Sony
|
| MCM63R918FC3.3R MCM63R918FC3.7R MCM63R836FC3.7R |
512K X 18 LATE-WRITE SRAM, 1.65 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
512K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
256K X 36 LATE-WRITE SRAM, 1.85 ns, PBGA119
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| GS8170LW36AGC-250 GS8170LW36AC-350 GS8170LW36AC-35 |
18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI[GSI Technology]
|
| GS8330DW36 GS8330DW36-200 GS8330DW72C GS8330DW36-2 |
36Mb Common I/O SigmaRAMs
Double Late Write SigmaRAM
|
ETC
GSI[GSI Technology]
|
| K7Z167288B K7Z163688B |
512Kx36 & 256Kx72 DLW(Double Late Write) RAM
|
Samsung semiconductor
|
| HM64YLB36512BP-33 HM64YLB36512 HM64YLB36512BP-28 |
16M Synchronous Late Write Fast Static RAM (512-kword 隆驴 36-bit)
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|
| GS8170DW72C-200 GS8170DW72C-300I GS8170DW36C-333 G |
256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
18Mb Σ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI Technology
|
| MCM63R818FC3.7R |
256K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
|
Motorola Mobility Holdings, Inc.
|
