| PART |
Description |
Maker |
| UL497L-S16-R UL497L-S16-T UL497-15 UL497G-S16-R |
HALL EFFECT PICKUP IGNITION CONTROLLER
|
Unisonic Technologies
|
| L482/1 L482D1 L482D1013TR |
HALL-EFFECT PICKUP IGNITION CONTROLLER
|
ST Microelectronics
|
| L497 |
HALL EFFECT PICKUP IGNITION CONTROLLER
|
ST Microelectronics
|
| 2N6796LCC4 |
N-Channel Power MOSFET（Vdss00VId(cont).4A，Rds(on).18ΩN沟道功率型MOS场效应管（Vdss00VId(cont).4A，Rds(on).18Ω
|
SEME-LAB[Seme LAB]
|
| NGD18N40CLB NGD18N40CLBT4 |
From old datasheet system
Ignition IGBT 18 Amps, 400 Volts
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on)
|
http://
ON Semiconductor
ONSEMI
|
| LIC01-215B-TR LIC01 6447 LIC01-195H LIC01-215B LIC |
230 V, SILICON SURGE PROTECTOR
LIGHT IGNITION CIRCUIT
From old datasheet system
LIGHT IGNITION CIRCUIT
|
STMicroelectronics
ST Microelectronics
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
| M51599FP |
Preamplifier for Optical Pickup
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MN3762MAE |
Image Pickup Devices
|
Panasonic
|
| MN3728MAE |
Image Pickup Devices
|
Panasonic
|
| MN3716AT MN3716FT |
Image Pickup Devices
|
Panasonic
|
