Part Number Hot Search : 
1N5162 KBP01 40100PG STA80 2SC30 1110FD LCE160A YBBND
Product Description
Full Text Search

CY23FP12-00211 - 200-MHz Field Programmable Zero Delay Buffer

CY23FP12-00211_2102045.PDF Datasheet
 Full text search : 200-MHz Field Programmable Zero Delay Buffer

 Related Part Number
PART Description Maker
XCV400E XCV300E-6PQ240C XCV300E-6PQ240I XCV300E-6B    Densities from 58 k to 4 M system gates
Virtex?E 1.8 V Field Programmable Gate Arrays
Virtex垄芒-E 1.8 V Field Programmable Gate Arrays
VIRTEX⒙-E 1.8 V FIELD PROGRAMMABLE GATE ARRAYS
Virtex⑩-E 1.8 V Field Programmable Gate Arrays
Virtex-E1.8VFieldProgrammableGateArrays
Extended Memory Field Programmable Gate Arrays
GT 60C 60#16 SKT PLUG
SOCKET-DIP, 16P, MACH CONT, .3LS, .17HI, GOLD
DIODE SCHOTTKY 45V 110A D-61-SL
SOCKET, IC 8 PIN DIP - Obsolete
GT 5C 5#16S PIN PLUG
GT 5C 5#16S SKT PLUG
Virtex-E 1.8 V Field Programmable Gate Arrays 的Virtex.8伏现场可编程门阵
VirtexE 1.8 V Field Programmable Gate Arrays 的Virtex⑩娥1.8伏现场可编程门阵
CANMS3470L12-10PL/C FPGA, 1536 CLBS, 82944 GATES, 416 MHz, PBGA432
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 600 CLBS, 32400 GATES, 357 MHz, PBGA352
AB 10C 10#16 SKT ANG PLG ROHS RoHS Compliant: Yes 的Virtex⑩娥1.8伏现场可编程门阵
CANMS3470L10-6SL/C FPGA, 1536 CLBS, 82944 GATES, 400 MHz, PBGA432
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 600 CLBS, 32400 GATES, 400 MHz, PBGA352
TVS Diode; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Polarization:Unipolar; Power Rating:1500W 的Virtex⑩娥1.8伏现场可编程门阵
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 6144 CLBS, 331776 GATES, 400 MHz, PBGA900
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 6144 CLBS, 331776 GATES, 416 MHz, PBGA900
Field Programmable Gate Arrays 现场可编程门阵列
TAPE, CORONA, CHEMRES, 25MMX9.15M; Length, Reel (Metric):9.15m; Width, external:25mm RoHS Compliant: NA 现场可编程门阵列
TAPE, SEMICOND, RUBBER, 19MMX4.5M; Length, Reel (Metric):45m; Length, tape:45m; Material:Ethylene Propylene Rubber; Width, tape:19mm RoHS Compliant: NA 现场可编程门阵列
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 6144 CLBS, 331776 GATES, 400 MHz, PBGA560
VirtexE 1.8 V Field Programmable Gate Arrays FPGA, 6144 CLBS, 331776 GATES, 357 MHz, PBGA860
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 6144 CLBS, 331776 GATES, 400 MHz, PBGA860
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 6144 CLBS, 331776 GATES, 357 MHz, PBGA900
VirtexE 1.8 V Field Programmable Gate Arrays FPGA, 6144 CLBS, 331776 GATES, 400 MHz, PQFP240
VirtexE 1.8 V Field Programmable Gate Arrays FPGA, 6144 CLBS, 331776 GATES, 357 MHz, PQFP240
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 600 CLBS, 32400 GATES, 357 MHz, PBGA256
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 3456 CLBS, 186624 GATES, 400 MHz, PBGA432
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 600 CLBS, 32400 GATES, 416 MHz, PBGA256
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 9600 CLBS, 518400 GATES, 416 MHz, PBGA560
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 6144 CLBS, 331776 GATES, 416 MHz, PBGA680
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 600 CLBS, 32400 GATES, 357 MHz, PBGA144
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 6144 CLBS, 331776 GATES, 416 MHz, PQFP240
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 7776 CLBS, 419904 GATES, 400 MHz, PBGA1156
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 3456 CLBS, 186624 GATES, 416 MHz, PQFP240
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 9600 CLBS, 518400 GATES, 400 MHz, PBGA560
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 1536 CLBS, 82944 GATES, 357 MHz, PBGA432
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 600 CLBS, 32400 GATES, 400 MHz, PBGA256
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 7776 CLBS, 419904 GATES, 400 MHz, PBGA680
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 1176 CLBS, 63504 GATES, 416 MHz, PBGA352
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 9600 CLBS, 518400 GATES, 357 MHz, PBGA1156
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 7776 CLBS, 419904 GATES, 416 MHz, PBGA680
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 600 CLBS, 32400 GATES, 400 MHz, PBGA144
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 7776 CLBS, 419904 GATES, 416 MHz, PBGA1156
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 600 CLBS, 32400 GATES, 416 MHz, PBGA144
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 6144 CLBS, 331776 GATES, 400 MHz, PBGA1156
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 2400 CLBS, 129600 GATES, 357 MHz, PBGA432
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 384 CLBS, 20736 GATES, 357 MHz, PBGA144
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 7776 CLBS, 419904 GATES, 357 MHz, PBGA680
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 2400 CLBS, 129600 GATES, 400 MHz, PBGA432
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 384 CLBS, 20736 GATES, 357 MHz, PQFP240
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 1176 CLBS, 63504 GATES, 416 MHz, PQFP240
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 600 CLBS, 32400 GATES, 416 MHz, PQFP240
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 600 CLBS, 32400 GATES, 400 MHz, PQFP240
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 2400 CLBS, 129600 GATES, 416 MHz, PQFP240
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 1176 CLBS, 63504 GATES, 357 MHz, PQFP240
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 2400 CLBS, 129600 GATES, 357 MHz, PQFP240
Virte -E 1.8 V Field Programmable Gate Arrays Virte1.8伏现场可编程门阵
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 1536 CLBS, 82944 GATES, 357 MHz, PBGA456
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 9600 CLBS, 518400 GATES, 400 MHz, PBGA680
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 1176 CLBS, 63504 GATES, 400 MHz, PBGA456
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 9600 CLBS, 518400 GATES, 416 MHz, PBGA680
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 1176 CLBS, 63504 GATES, 357 MHz, PBGA456
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 9600 CLBS, 518400 GATES, 357 MHz, PBGA680
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 12696 CLBS, 685584 GATES, 357 MHz, PBGA1156
GT 4C 4#8 SKT PLUG FPGA, 3456 CLBS, 186624 GATES, 357 MHz, PQFP240
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 384 CLBS, 20736 GATES, 400 MHz, PQFP240
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 2400 CLBS, 129600 GATES, 416 MHz, PBGA676
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 2400 CLBS, 129600 GATES, 416 MHz, PBGA432
SOCKET IC 24-PIN 现场可编程门阵列
71-604913-03S 的Virtex⑩娥1.8伏现场可编程门阵
Field Programmable Gate Arrays FPGA, 1536 CLBS, 82944 GATES, 357 MHz, PBGA352
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 9600 CLBS, 518400 GATES, 357 MHz, PBGA860
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 9600 CLBS, 518400 GATES, 416 MHz, PBGA860
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 9600 CLBS, 518400 GATES, 400 MHz, PBGA860
GT 24C 24#16 PIN PLUG 的Virtex⑩娥1.8伏现场可编程门阵
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 3456 CLBS, 186624 GATES, 400 MHz, PBGA900
Field Programmable Gate Arrays FPGA, 1536 CLBS, 82944 GATES, 416 MHz, PBGA352
Field Programmable Gate Arrays FPGA, 1536 CLBS, 82944 GATES, 357 MHz, PBGA256
Field Programmable Gate Arrays FPGA, 1536 CLBS, 82944 GATES, 416 MHz, PBGA456
GT 7C 7#12 PIN PLUG 的Virtex⑩娥1.8伏现场可编程门阵
Virtex-E 1.8 V Field Programmable Gate Arrays FPGA, 2400 CLBS, 129600 GATES, 400 MHz, PBGA560
Virtex??E 1.8 V Field Programmable Gate Arrays
Virtex-E 1.8V field programmable gate array.
   Fast, High-Density 1.8 V FPGA Family
   Field Programmable Gate Arrays
 XILINX[Xilinx, Inc]
Xilinx, Inc.
XILINX INC
MVPG30B-XX-NAE1C000 MVPG30E-XX-NAE1C000 MVPG30X MV Field Programmable DSP Switcher 1 MHz, 3.0A Peak Current-Limit Step-Down Regulator with AnyVoltage Technology
Field Programmable DSP Switcher垄芒 1 MHz, 3.0A Peak Current-Limit Step-Down Regulator with AnyVoltage垄芒 Technology
 Marvell Technology Group Ltd.
XC3000 XC3000A XC3000L XC3020A-7PQ100C XC3030A XC3 Description: XC3000 Field Programmable Gate Array
Field Programmable Gate Arrays (XC3000A/L, XC3100A/L)
 XILINX[Xilinx, Inc]
MRF9210 MRF9210R3 MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
 MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
PDU54-1500 PDU54-2000 PDU54-1200M PDU54-1200MC4 PD Delay 1500 /-200 ns, 4-BIT, ECL-interfaced programmable delay line
Delay 2000 /-400 ns, 4-BIT, ECL-interfaced programmable delay line
Delay 1200 /-200 ns, 4-BIT, ECL-interfaced programmable delay line
Delay 1000 /-200 ns, 4-BIT, ECL-interfaced programmable delay line
Delay 200 /-60 ns, 4-BIT, ECL-interfaced programmable delay line
Delay 100 /-50 ns, 4-BIT, ECL-interfaced programmable delay line
 Data Delay Devices Inc
ICS29110 291G-XXLFT TRIPLE PLL FIELD PROG. SPREAD SPECTRUM CLOCK SYNTHESIZER
200 MHz, OTHER CLOCK GENERATOR, PDSO20
 INTEGRATED DEVICE TECHNOLOGY INC
3-9-1J 2-2-1D 4-1-6D Transformers SMD RF WIDEBAND 0.15 MHz - 200 MHz RF TRANSFORMER
Transformers 6PIN DIP RF WIDEBAND 0.07 MHz - 200 MHz RF TRANSFORMER
0.004 MHz - 500 MHz RF TRANSFORMER
 Bourns, Inc.
BOURNS INC
M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M3 256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-X and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V;
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V;
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 Mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V;
16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
4-Mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-Mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-Mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
 Renesas Electronics Corporation.
Renesas Electronics, Corp.
CY220501KFZXI CY22050KFZXC CY22050KFZXI CY2205009 200 MHz, OTHER CLOCK GENERATOR, PDSO16 4.40 MM, MO-153, TSSOP-16
One-PLL General Purpose Flash Programmable Clock Generator
 Cypress Semiconductor, Corp.
CY29350AI 2.5V or 3.3V, 200-MHz, 9-Output Clock Driver 200 MHz, OTHER CLOCK GENERATOR, PQFP32
 Cypress Semiconductor, Corp.
 
 Related keyword From Full Text Search System
CY23FP12-00211 pin CY23FP12-00211 suply voltase IC CY23FP12-00211 gain CY23FP12-00211 Single CY23FP12-00211 microcontroller
CY23FP12-00211 varactor CY23FP12-00211 filetype:pdf CY23FP12-00211 pnp CY23FP12-00211 samsung CY23FP12-00211 usb circuit diagram
 

 

Price & Availability of CY23FP12-00211

All Rights Reserved © IC-ON-LINE 2003 - 2022  
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]
 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.20317697525024