| PART |
Description |
Maker |
| IXRH50N80 IXRH50N60 |
IGBT with Reverse Blocking capability
|
IXYS[IXYS Corporation]
|
| P600M6A10 P600B6A1 P600A6A05 P600G6A4 P600G P600J |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V
SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) 一般整流（电压范围- 50000伏特，电六点○安培）
|
WINGS[Wing Shing Computer Components]
Vishay Intertechnology, Inc.
|
| DRA2TG DRA2T DRA2TB DRA2TC DRA2TE |
2.0A Reverse Blocking Thyristor
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MAX14606EWLT |
Overvoltage Protectors with Reverse Bias Blocking
|
MAXIM - Dallas Semiconductor
|
| DGT305SE18 DGT305RE |
Reverse Blocking Gate Turn-off Thyristor
|
Dynex Semiconductor
|
| TIC126A12 |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
| TIC106A TIC106B TIC106C TIC106D TIC106E TIC106M TI |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
| MCR2505 MCR25NG MCR25D MCR25DG MCR25M MCR25MG MCR2 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| MCR6904 MCR69-3G MCR69-2 MCR69-2G MCR69-3 MCR69 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| MCR8N MCR8NG |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| MCR12DG MCR12NG MCR12MG |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
