| PART |
Description |
Maker |
| M464S0824FTS |
8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| GMM2649233ETG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| KMM366S823BT |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM366S803BTL |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| HYM71V8M655HCT6 |
8Mx64|3.3V|8/P/S|x4|SDR SDRAM - SO DIMM 64MB 8Mx64 | 3.3 | 8/P/S | x4 | SDRAM的特别提款权-4MB的内
|
Daesan Electronics, Corp.
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L1713CT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
| M470L1624BT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx16 Data Sheet
|
Samsung Electronic
|
| NT128S64VH4A0GM0-7K |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD
|
NANYA
|
| HMP351S6AFR8C-S6 HMP351S6AFR8C-S5 HMP351S6AFR8C-Y5 |
512M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A
|
Hynix Semiconductor, Inc.
|
| M470T6464AZ3-CLE6_D5_CC M470T5669AZ0-CLE6/D5/CC M4 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
