| PART |
Description |
Maker |
| MCM54402AZ70 MCM54402AN80 MCM54402AT60 MCM54402AN6 |
1M X 4 STATIC COLUMN DRAM, 70 ns, PZIP20
1M X 4 STATIC COLUMN DRAM, 80 ns, PDSO20
1M X 4 STATIC COLUMN DRAM, 60 ns, PDSO20
|
MOTOROLA INC
|
| KM41C466J-10 KM41C466J-7 KM41C466J-8 |
64K X 4 STATIC COLUMN DRAM, 100 ns, PQCC18
64K X 4 STATIC COLUMN DRAM, 70 ns, PQCC18
64K X 4 STATIC COLUMN DRAM, 80 ns, PQCC18
|
|
| HM511002AZP-7 HM511002AZP-6 HM511002AZP-12 HM51100 |
Compliant to MIL standard, Ribbon cable connectors; HRS No: 610-0192-0 71; Contact Mating Area Plating: Gold
x1 Static Column Mode DRAM x1静态列模式DRAM
|
Infineon Technologies AG
|
| AAA2800 AAA2801 |
(AAA2800 Series) Static Column Decode Mode CMOS 256k x 1 DRAM
(AAA2800 Series) Page Mode CMOS 256k x 1 DRAM
|
NMB Technologies
|
| MT4C1026DJ-8 |
1M X 1 STATIC COLUMN DRAM, 80 ns, PDSO20
|
|
| MCM514258J10 |
256K X 4 STATIC COLUMN DRAM, 100 ns, PDSO20
|
MOTOROLA INC
|
| HM571000ZP-35R |
1M X 1 STATIC COLUMN DRAM, 35 ns, PZIP28 0.400 INCH, PLASTIC, ZIP-28
|
Diodes, Inc.
|
| M5M44258-10 M5M44258-7 M5M44258-8 M5M44258BP M5M44 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Semiconductor
|
| UPD4265400G7-A50 UPD4265400G7-A60 UPD4265400G7-A70 |
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
128K x 8 Static RAM
x4FastPageModeDRAM
|
|
| UPD424800LE-60 UPD424800LE-80 UPD424800LE-70 UPD42 |
Local Area Network ATM Transceiver
SST™ SONET/SDH Serial Transceiver
x8 Fast Page Mode DRAM
256K (32K x 8) Static RAM
Low Skew Clock Buffer x8快速页面模式的DRAM
|
NEC, Corp.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
