| PART |
Description |
Maker |
| MDI550-12A4 MID550-12A4 |
1200V IGBT module
IGBT Modules Short Circuit SOA Capability Square RBSOA
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
| VIO130-06P1 VII130-06P1 VDI130-06P1 VID130-06P1 IX |
IGBT Modules
From old datasheet system
IGBT Modules: Buck Configurated IGBT Modules
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
| M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
From old datasheet system
HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
ETC
Mitsubishi Electric Corporation
|
| FS15R12VT3 |
IGBT-modules
IGBT Modules up to 1200V SixPACK; Package: AG-EASY750-1; IC (max): 15.0 A; VCE(sat) (typ): 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EasyPACK 750;
|
eupec GmbH
Infineon Technologies
|
| VUB50-16PO1 |
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS
|
| SEMIX653GD176HDC |
Trench IGBT Modules 650 A, 1700 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| SKM195GAL066D |
Trench IGBT Modules 265 A, 600 V, N-CHANNEL IGBT
|
SEMIKRON
|
| OM9403SD |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a DP-10A package
IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A
|
IRF[International Rectifier]
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| SKIM220GD176D |
IGBT Modules 220 A, 1700 V, N-CHANNEL IGBT
|
Semikron International
|
