| PART |
Description |
Maker |
| MMH3111NT108 |
Heterostructure Field Effect Transistor (GaAs HFET)
|
Freescale Semiconductor, Inc
|
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| AH1802-SNG-7 AH1802-FJG-7-01 AH1802-WG-7 AH1802-FY |
Micropower, Ultra-Sensitive Omnipolar Hall-Effect Switch
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, 0.30V, RECTANGULAR, SURFACE MOUNT
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, 0.30V, SQUARE, SURFACE MOUNT 2 X 2 MM, GREEN, DFN-6
|
Diodes, Inc.
Diodes Inc.
Diodes Incorporated
|
| SSM3K05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHALLEL MOS TYPE
|
Toshiba Semiconductor
|
| MMBF2202PT1_D ON2097 MMBF2201PT1 MMBF2202PT3 MMBF2 |
Small-signal MOSFET TMOS single P-channel field effect transistor
Motorola Preferred Device
From old datasheet system
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| HAL508UA-A HAL523SF-A HAL523SF-K HAL516SF-A HAL516 |
MAGNETIC FIELD SENSOR-HALL EFFECT, -2.3-2.3mT, 0-20mA, RECTANGULAR, THROUGH HOLE MOUNT
MAGNETIC FIELD SENSOR-HALL EFFECT, 20.7-13.5mT, 0-20mA, RECTANGULAR, THROUGH HOLE MOUNT PLASTIC, TO-92UA-1, 3 PIN
Hall-Effect Sensor Family
|
Micronas Semiconductor Holding AG
|
| 2SK3078A |
Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3314 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)
|
TOSHIBA[Toshiba Semiconductor]
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
