PART |
Description |
Maker |
NE3510M04-T2 NE3510M04-A NE3510M04-T2-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
California Eastern Laboratories
|
NE3511S02 NE3511S02-T1C NE3511S02-A NE3511S02-T1D |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
celduc-relais
|
VSMF471009 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHG6200 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
TSHG8400 TSHG840009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http:// Vishay Siliconix
|
TSMF3710-GS08 TSMF3710-GS18 TSMF3710 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
VSMB1940X01 |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHF5210 TSHF521009 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
http://
|
VSMG2720-GS18 VSMG2720-GS08 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
RLD-78PP-G1 RLD-78NP-G1 |
Title AlGaAs,Double-heterojunction,Visible Laser Diodes(铝砷化镓激光二极管) Title AlGaAs, double-heterojunction, visible laser diodes Title AlGaAs/ double-heterojunction/ visible laser diodes
|
Rohm CO.,LTD. ROHM[Rohm]
|
NE350184C NE350184C-T1 NE350184C-T1A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|