| PART |
Description |
Maker |
| MB81P643287 MB81P643287-50 MB81P643287-60 |
8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MB81P643287-50 MB81P643287-60 |
MEMORY 8 x 256K x 32 BIT, FCRAM CORE BASED DOUBLE DATA RATE SDRAM
|
Fujitsu Microelectronics
|
| K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| MH32D64KQH-75 MH32D64KQH-10 |
2,147,483,648-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16D72AKLB-10 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Corporation
|
| MH16D72AKLB-10 MH16D72AKLB-75 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH8D64AKQC-75 MH8D64AKQC-10 |
536,870,912-BIT (8,388,608-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Corporation
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| M13S128168A M13S128168A-5T M13S128168A-5TG M13S128 |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
ETC
|
| M13S64164A-5BG M13S64164A-5TG M13S64164A-6BG M13S6 |
1M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M13S64164A09 M13S64164A-5TG M13S64164A-6BG M13S641 |
1M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
Elite Semiconductor Mem...
|
| M13S128168A-4BG M13S128168A-4TG M13S128168A08 |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
