| PART |
Description |
Maker |
| MB81ES173225-15-X MB81ES171625-15-X E511408 MB81ES |
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
From old datasheet system
Consumer FCRAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MB81P643287-50 MB81P643287-60 |
MEMORY 8 x 256K x 32 BIT, FCRAM CORE BASED DOUBLE DATA RATE SDRAM
|
Fujitsu Microelectronics
|
| 106414-1205 |
QSFP to MPO Quad Data Rate PSM4 Active Optical Cable, 40 Gbps Data Rate, 2dB Loss Budget, Cable Length 5.0m
|
Molex Electronics Ltd.
|
| IS45S16160C-7TLA1 IS45S16160C-75TLA1 IS45S83200C |
256 Mb Single Data Rate Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IDT5T9050PGGI IDT5T9050PGGI8 IDT5T9050PGI8 |
2.5V Single Data Rate 1:5 Clock Buffer TeraBuffer Jr.
|
IDT
|
| MB82DBS02154E-70L |
32 Mbit Mobile FCRAM 1.8 V, Burst Mode, Multiplexed Address and Data Bus
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| 6SVP47M OS02N-DFSVP012 |
From old datasheet system
OS-CON DATA SHEET 操作系统节能的数据资
|
Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| M13S2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M13S2561616A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TC59LM814CFT-60 TC59LM806CFT-60 TC59LM806CFT-50 TC |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
4,194,304-WORDSx4 BANKSx16-BITS Network FCRAM or 8,388,608-WORDSx4BANKSx8-BITS Network FCRAM
|
Toshiba Corporation
|
