| PART |
Description |
Maker |
| UPD45256163G5-A80L-9JF UPD45256441G5-A80-9JF UPD45 |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
|
|
| M378B6573EZ0-CG8 |
64M X 64 SYNCHRONOUS DRAM MODULE, DMA240
|
|
| M2V64S20DTP M2V64S20DTP-6 M2V64S20DTP-6L M2V64S20D |
64M Synchronous DRAM
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2V64S40BTP-8L M2V64S30BTP-8L M2V64S40BTP-7L M2V64 |
64M bit Synchronous DRAM 6400位同步DRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| HYB39S64400CT-7.5 HYB39S64800CT-7.5 HYB39S64800CTL |
64M SDRAM Component
64-MBit Synchronous DRAM
|
Infineon Technologies A...
|
| THMY7264E0LE-80 THMY7264E0LE-75 |
64M Word x 72 Bit Synchronous DRAM Module(64M字x 72位同步DRAM模块)
|
Toshiba Corporation
|
| M5M4V64S20ATP-8 M5M4V64S20ATP-10 M5M4V64S20ATP-12 |
From old datasheet system
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HYS64V64220GBDL-7.5-C2 HYS64V64220GBDL-8-C2 |
512MB PC133 (3-3-3) 2-bank. FBGA based. End-of-Life
64M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
INFINEON TECHNOLOGIES AG
|
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
| MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
