| PART |
Description |
Maker |
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100
LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| AS5C2568 AS5C2568DJ-20_XT AS5C2568DJ-12_883C AS5C2 |
SRAM
32K x 8 SRAM SRAM MEMORY ARRAY
SRAM 静态存储器
|
ETC
AUSTIN[Austin Semiconductor]
Electronic Theatre Controls, Inc.
|
| AS5LC512K8DJ-12L/IT AS5LC512K8F-12L/IT AS5LC512K8E |
512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT
|
Austin Semiconductor, Inc
|
| UT62L12916 UT62L12916BS UT62L12916BS-100L UT62L129 |
128K X 16 BIT LOW POWER CMOS SRAM 128K的16位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
UTRON Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| HY62LF16201ALLF-85 HY62LF16201ALLF-85I HY62LF16201 |
Super Low Power Slow SRAM - 2Mb
x16 SRAM
|
Hynix Semiconductor
|
| BS616UV2019AI85 BS616UV2019TI85 |
Ultra Low Power CMOS SRAM 128K X 16 bit 超低功耗CMOS SRAM 128K的16
|
BRILLIANCE SEMICONDUCTOR, Inc.
|
| 23A256-E/P 23A256-E/SN 23A256-E/ST 23K256-E/P 23K2 |
256K SPI Bus Low-Power Serial SRAM
32K X 8 STANDARD SRAM, PDSO8
|
Microchip Technology
|
| UC62LS2048KI-25 UC62LS2048 UC62LS2048AC-20 UC62LS2 |
Low Power CMOS SRAM 低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
