| PART |
Description |
Maker |
| 1SS370 E000291 |
From old datasheet system
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
DIODE (HIGH VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| RM50C1A-XXF RM50DA/CA/C1A-XXF RM50CA-XXF RM50DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| CPD83V |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
| HSU226 |
Diodes>Switching
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
| BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
Infineon
|
| BAS16-02W BAS1602W Q62702-A1239 |
From old datasheet system
Silicon Switching Diode Preliminary data (For high-speed switching applications)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| GBAV151 |
The GBAV151 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| BAW56 Q62702-A688 BAW56-BOXREELOF3K |
ER 3C 3#12 SKT PLUG 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
INVERTER 12V-INPUT 1700V-OUTPUT
Programmable Skew Clock Buffer
Silicon Switching Diode Array (For high-speed switching applications Common anode)
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| CMOD4448 CENTRALSEMICONDUCTORCORP-CMOD4448 |
ULTRAminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| RD2003JN |
Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode
|
Sanyo Semicon Device
|
