| PART |
Description |
Maker |
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
| M391T2953BGZ0-CD5_CC M391T2953BGZ3-CD5_CC M378T335 |
64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240
TVS ZENER BIDIRECT 1500W 13V SMC
TVS BIDIRECT 1500W 130V SMC
240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| KVR100X64SC2/128 |
128MB 100MHz Non-ECC CL2 SODIMM 128MB00MHz的非ECC CL2的的SODIMM
|
Samsung Semiconductor Co., Ltd.
|
| M378T6553CZ3-CCC M378T6553CZ3-CD5 M378T6553CZ3-CE6 |
DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
| M366S3354BTS-C7A M374S6553BTS-C7A M374S2953BTS-C7A |
SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA)
128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| HYMD264G726DLF8N-D43 HYMD264G726DLF8N-J HYMD264G72 |
64M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Registered DIMM 512MB
|
Hynix Semiconductor, Inc.
|
| HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM
32M X 16 DDR DRAM, 0.45 ns, PBGA84
128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| KVR533D2S8F4_512I KVR533D2S8F4 KVR533D2S8F4/512I |
Memory Module Specifications (512MB 64M x 72-BIT PC2-4200 CL4 ECC 240-Pin FBDIMM)
|
List of Unclassifed Manufacturers
ETC
|
| HYS72D64320GBR-7-B HYS72D32300GBR-7-B HYS72D64300G |
DDR SDRAM Modules - 512 MB (64Mx72) PC2700; 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank, FBGA based
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC3200 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC2700 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank available 2Q/04
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based
DDR SDRAM Modules - 1GB (128Mx72) PC2700 2-bank, FBGA based
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank, FBGA based
|
Infineon
|
