| PART |
Description |
Maker |
| FMP36-015P IXYSCORP-FMP36-015P |
Polar P & N-Channel Power MOSFETs Common Drain Topology
36 A, 150 V, 0.04 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET ISOPLUS, I4-PAC-5
|
IXYS Corporation
IXYS, Corp.
|
| PART STC68-15C5 STC68-25C6 STC68-3C3 STC68-4C4 STC |
Subminiature, Leaded Solid Tantalum Capacitors Polar or Non-Polar
|
http://
Vishay Siliconix
|
| 226PBM025M |
Radial lead BI-POLAR / NON-POLAR
|
Illinois Capacitor, Inc...
|
| 106BPS035M |
Radial lead BI-POLAR / NON-POLAR
|
Illinois Capacitor, Inc...
|
| 106BPS063M |
Radial lead BI-POLAR / NON-POLAR
|
Illinois Capacitor, Inc...
|
| 106BPS100M |
Radial lead BI-POLAR / NON-POLAR
|
Illinois Capacitor, Inc...
|
| GS6333UR18D2 GS6333UR19D1 GS6333UR19D2 GS6333UR19D |
D-Subminiature Connector; Gender:Female; No. of Contacts:9; Contact Termination:Crimp; D Sub Shell Size:DB9; Body Material:Steel; Body Plating:Zinc; Contact Plating:Gold RoHS Compliant: Yes
CABLE ASSEMBLY; SMA MALE TO N FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; 12" CABLE LENGTH; 3引脚，低功率，P复位电路
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 16V; Case Size: 10x12.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 16V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 3300uF; Voltage: 16V; Case Size: 18x35.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 330uF; Voltage: 10V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 2200uF; Voltage: 16V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 1000uF; Voltage: 16V; Case Size: 12.5x25 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 470uF; Voltage: 10V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 330uF; Voltage: 16V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 10V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 16V; Case Size: 8x11.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 47uF; Voltage: 10V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 3300uF; Voltage: 10V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 4700uF; Voltage: 10V; Case Size: 18x35.5 mm; Packaging: Bulk
3 Pin, Low-Power, P Reset Circuits
IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3, SOT-23, 3 PIN, Power Management Circuit
|
VISHAY SEMICONDUCTORS
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| UF630L-TF3-T UF630 UF630L-TA3-T UF630-TA3-T UF630- |
9A, 200V, 0.4?/a> , N-CHANNEL POWER MOSFETS
9A, 200V, 0.4 , N-CHANNEL POWER MOSFETS
9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS 9A条，00V.4з的N通道功率MOSFET
|
UTC[Unisonic Technologies]
友顺科技股份有限公司
Unisonic Technologies Co., Ltd.
|
