| PART |
Description |
Maker |
| M66223FP |
Mail Box That Incorporates a Complete CMOS Shared Memory Cell
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| GTL-2691 |
24 Gigabit Ethernet ports with 4 shared SFP slots and 2 10G slots Multicast routing IGMP V1/V2/V3, MLD
|
Level One
|
| IS61VPS102418A-250B2I IS61LPS102418A-200B2 IS61VPS |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solu...
|
| A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8 |
Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM
256K X 16/18. 128K X 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的X 32/36 LVTTL等级。流水线数据库管理员的SRAM
256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
|
AMIC Technology, Corp.
|
| UT1553BRTIGCA UT1553B-RTIPC 5962-8862801-XA 5962-8 |
RTI remote terminal interface. 10% to 35% clock duty cycle. Jan class Q. Lead finish optional.
RTI remote terminal interface. 10% to 35% clock duty cycle. Jan class Q. Lead finish gold.
RTI remote terminal interface. 10% to 35% clock duty cycle. Jan class Q. Lead finish solder.
From old datasheet system
BCRT Bus Controller/Remote Terminal/Monitor
|
Aeroflex Circuit Technology
ETC[ETC]
|
| MAX887 MAX887HC_D MAX887HESA MAX887HC/D |
100% Duty Cycle, Low-Noise, Step-Down, PWM DC-DC Converter
100% Duty Cycle, Low-Noise, Step-Down, PWM DC-DC Converter
100% Duty Cycle / Low-Noise / Step-Down / PWM DC-DC Converter
CAP,3.3uF,100VDC,20-% Tol,20 % Tol
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| M74HC4852 M74HC4852M1R M74HC4852RM13TR M74HC4852TT |
DUAL 4:1 CHANNEL ANALOG MUX/DEMUX WITH INJECTION CURRENT PROTECTION
DUA 4:1 CHANNEL ANALOG MUX/DMUX WITH INJECTION CURRENT PROTECTION
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IDT71V3577S75PFG IDT71V3577SA80PFGI IDT71V3577SA85 |
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3VI / O的流量，通过输出脉冲计数器，单周期取
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3V的I / O的流量，通过输出脉冲计数器，单周期取
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
IDT
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
|
| SWE81800 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE210000 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
