| PART |
Description |
Maker |
| UPD72042 UPD72042GT |
LSI DEVICES FOR Inter Equipment BusTM (IEBusTM) PROTOCOL CONTROL
|
NEC[NEC]
|
| UPD72042BGT UPD72042B |
IEBus(Inter Equipment Bus) protocol control IC
LSI DEVICE FOR Inter Equipment Bus (IEBus) PROTOCOL CONTROL
|
NEC[NEC]
|
| LC89602 |
Audio Decoder LSI for Mini-Disk Playback(?ㄤ?寰??纾????????棰?????LSI)
CMOS LSI
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC8954 |
CMOS LSI
Error Correction and ADPCM Playback LSI for CD-1 Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC74751 2086 |
On-Screen Display LSI
From old datasheet system
CMOS LSI
|
SANYO[Sanyo Semicon Device]
|
| LC8955 |
CMOS LSI
CD-1 Format ADPCM Data Replay LSI
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| AS1115-BQFT AS1115-BSST AS111512 |
64 LEDs, IC Inter faced LED Dr iver wi th Keyscan
|
austriamicrosystems AG
|
| LC74725 LC74725M |
CMOS LSI
On-Screen Display Controller LSI
|
SANYO[Sanyo Semicon Device]
|
| LC895925 |
Signal Processing LSI for CD-R Drives
CMOS LSI
|
Sanyo Semicon Device
|
| GS-29-010 |
FCI BergStak? Connector & TE Free Height* Connector Inter-Mating
|
FCI connector
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
