| PART |
Description |
Maker |
| IBM11N4735BB-70 IBM11N4645BB-60 |
x72 EDO Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
American Power Management, Inc.
|
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| MSC2323258A MSC2323258A-XXBS4 MSC2323258A-XXDS4 |
2097152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
DPDT 10A MINI 24VDC 2097152字32位DRAM模块：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| MSC2323258D-XXDS4 MSC2323258D-XXBS4 MSC2323258D MS |
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
From old datasheet system
2097152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
2M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72
DPDT 10A MINI 115VAC 2097152字32位动态随机存储器模块：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
Oki Electric Industry Co., Ltd.
|
| MT4C16270 |
DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
|
Micron Technology
|
| NN518125LJ-70 NN518125LJ-50 NN518125LJ-60 NN518125 |
x8 EDO Page Mode DRAM
|
|
| HM5165405AUTT-6 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Elpida Memory, Inc.
|
| HY5118164CSLTC-80 HY5118164CTC-70 HY5118164CSLJC-7 |
x16 EDO Page Mode DRAM
|
|
| HY5116404CSLT-50 HY5116404CSLT-60 HY5116404CSLJ-50 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
