| PART |
Description |
Maker |
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| L652DU12RF L652DU12RE AM29LV652DU50MAE AM29LV652DU |
128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOControl 128兆位6米8位）的CMOS 3.0伏特，只有统一部门闪存与VersatileIO⑩控制记
128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO??Control
|
Advanced Micro Devices, Inc.
|
| AM29F010B-90EK AM29F010B-45EC AM29F010B-45PC AM29F |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 90 ns, PDSO32
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 45 ns, PDSO32
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 45 ns, PDIP32
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 120 ns, PDSO32
15V Single Output Isolated DC/DC Converter 128K X 8 FLASH 5V PROM, 120 ns, PDIP32
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 120 ns, PQCC32
128K X 8 FLASH 5V PROM, 90 ns, PDIP32
|
Spansion, Inc.
SPANSION LLC
|
| AM29F200AB-90DWE1 AM29F200AT-90DWE AM29F200AT-90DW |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修1
|
Advanced Micro Devices, Inc.
|
| AM29F200AB-150EEB AM29F200AB-70FC AM29F200AB-90SEB |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 70 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区闪存
Dual Retriggerable Monostable Multivibrators 16-SSOP -40 to 85 128K X 16 FLASH 5V PROM, 120 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 120 ns, PDSO48
Dual Retriggerable Monostable Multivibrators 16-SOIC -40 to 85 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区闪存
|
Advanced Micro Devices, Inc.
http://
|
| AM29LV642DU120PAE AM29LV642DU50PAE AM29LV642DU50PA |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OControl
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
|
Advanced Micro Devices, Inc.
|
| AM29BDS128HD9VFI AM29BDS64HD8VKI AM29BDS128HD8VKI |
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 12864兆位米或4个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 8M X 16 FLASH 1.8V PROM, 50 ns, PBGA80
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 1284兆位米或4个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| AM29F200BB-120DT1 AM29F200BB-120DP1 AM29F200BB-120 |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
|
Advanced Micro Devices, Inc.
|
| AM29F200B01 AM29F200BT-90DWI1 AM29F200B AM29F200BB |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
|
AMD[Advanced Micro Devices]
|
| AM29F100 AM29F100B-120EC AM29F100B-120ECB AM29F100 |
1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory
1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
|
AMD[Advanced Micro Devices]
|
| AM29PDL128G80 AM29PDL128G90 AM29PDL128G70R |
128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
|
Advanced Micro Devices
|
