| PART |
Description |
Maker |
| LT1815 |
6.5mA, 220MHz, 1500V/μs,Low Power,Operational Amplifier with Programmable Current(6.5mA, 220MHz, 1500V/μs 低功单路电流可编程运算放大器)
|
Linear Technology Corporation
|
| LT1816 LT1817 LT1817CGN LT1816AIMS |
Single/Dual/Quad 220MHz, 1500V/us Operational Amplifiers with Programmable Supply Current QUAD OP-AMP, 2000 uV OFFSET-MAX, 220 MHz BAND WIDTH, PDSO16
|
Linear Technology Corporation
Linear Technology, Corp.
|
| CA3450 CA3450E FN1732 |
220MHz, Video Line Driver, High Speed Operational Amplifier OP-AMP, 35000 uV OFFSET-MAX, 220 MHz BAND WIDTH, PDIP16
220MHz, Video Line Driver, High Speed Operational Amplifier 220MHz，视频线驱动器，高速运算放大器
From old datasheet system
220MHz/ Video Line Driver/ High Speed Operational Amplifier
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FMU-G2FS |
1500V/10A Damper Diode(1500V/10A，阻尼二极管)
|
http://
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| HY62U8100B-E HY62U8100B-I HY62U8100BLLG HY62U8100B |
Low Power Slow SRAM - 1Mb
128K x8 bit 3.0V Low Power CMOS slow SRAM
x8|3V|70/85/100|Low Power Slow SRAM - 1M
|
Hynix Semiconductor
|
| SST375 SST750 SST3 SST1 SST7 SST625 SST1.5 SST2 SS |
Slow blow. square ceramic. 2410 size|Fuses
Square Ceramic Surface Mount Slow Blow Fuse
|
BEL[Bel Fuse Inc.]
|
| HY62V8400ALLG-E HY62V8400ALLG-I HY62V8400ALLG HY62 |
Low Power Slow SRAM - 4Mb
512K x8 bit 3.3V Low Power CMOS slow SRAM
|
HYNIX[Hynix Semiconductor]
|
| MABA-007488-CT9550 MABA-007488-CT95TB MABA-007488- |
9:1 Transmission Line Step-up Transformer 5-220MHz
|
http://
MACOM[Tyco Electronics]
|
| ICS95V842YFILF-T ICS95V842I |
DDR Phase Lock Loop Clock Driver (60MHz - 220MHz)
|
Integrated Circuit Systems
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb
SWITCH, REED SPST-NO 10W SMD
QSW-REED,10MM,10W,SMD
9 POS FR-4 SIP SOCKET
x8|3V|70/85/100|Low Power Slow SRAM - 256K
x8|3.3V|70/85/100|Low Power Slow SRAM - 256K
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
x8 SRAM x8的SRAM
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Analog Devices, Inc.
Panasonic Industrial Solutions
|
