| PART |
Description |
Maker |
| VIM-310 |
VIM-310
|
Varitronix international limited
|
| SR5409 |
310.00 MHz One Port SAW Resonator
|
Vanlong Technology Co., Ltd.
|
| CNX310056E4108 |
CNX 310 XXX CABLE ASSEMBLY
|
Visual Communications Company
|
| NTZD5110N NTZD5110NT1 NTZD5110NT1G NTZD5110NT5G |
Small Signal MOSFET 60 V, 310 mA, Dual N-Channel with ESD Protection 294 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563
|
ON Semiconductor
|
| TB0468A |
IF SAW Filter 310 MHz (SMD 5.0mmX5.0mm)
|
TAI-SAW TECHNOLOGY CO., LTD.
|
| PXA300 PXA310 |
Storage Solution for Marvell’s PXA300/310 Platform
|
Actel Corporation
|
| NX8346TB-AZ |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
California Eastern Labs
|
| L2SK801LT1G L2SK801LT3G |
Small Signal MOSFET 310 mAmps, 60 Volts N?Channel SOT?3
|
Leshan Radio Company
|
| NX5310EK-AZ NX5310 NX5310EH-AZ NX531006 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| R463I32205002K |
Capacitor, film, 0.22 uF, /-10% Tol, -40/ 110C, Safety: X2, 310 VAC, Lead Spacing=15 mm
|
Kemet Corporation
|
| NX6308GH NX6308GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
