| PART |
Description |
Maker |
| DS1380N DS1380SN |
NVRAM (Battery Based)
|
|
| DS1650Y-70-IND DS1650Y-100-IND DS1650Y-85-IND DS16 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Bourns, Inc.
Maxim Integrated Products, Inc.
|
| DS1245ABL-120 DS1245ABL-120-IND DS1245YL-120-IND D |
NVRAM (Battery Based) NVRAM中（基于电池
|
Abracon, Corp.
|
| CAT22C12P-20 CAT22C12P-30 CAT22C12PI-30 CAT22C12PI |
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
ITT, Corp.
|
| M41ST87YMX6F |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| M41ST87WMX6 M41ST87WMX6TR M41ST87YMX6 M41ST87YMX6T |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| GN01096B |
GaAs IC(with built-in ferroelectric)
|
Panasonic Semiconductor
|
| GN01081B |
GaAs IC with built-in ferroelectric RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
Black Box, Corp.
Panasonic Semiconductor
|
| STK12C68-5S30 STK12C68-5W30 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| M40Z30007 M40Z300 M40Z300MQ1E M40Z300MQ6E M40Z300W |
5V or 3V NVRAM supervisor for up to 8 LPSRAMs
|
STMicroelectronics
|
| M40SZ100WMQ6F |
3 V NVRAM supervisor for LPSRAM
|
ST Microelectronics
|
| M40Z11107 M40Z111WMH6E M40Z111WMH6F M4Z32-BR00SH1 |
5V or 3V NVRAM supervisor for up to two LPSRAMs
|
STMicroelectronics
|
