| PART |
Description |
Maker |
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| MAX1745 MAX1745AUB MAX1745EUB MAX1744 MAX1744EUB M |
High-Voltage, Step-Down DC-DC Controller in uMAX
High-Voltage, Step-Down DC-DC Controller in レMAX
High-Voltage, Step-Down DC-DC Controller in ??AX
High-Voltage Step-Down DC-DC Controller in MAX
Replaced by TMS320C6410 : Digital Signal Processor 40-PDIP 0 to 70
High-Voltage, Step-Down DC-DC Controller in MAX SWITCHING CONTROLLER, 330 kHz SWITCHING FREQ-MAX, PDSO10
High-Voltage, Step-Down DC-DC Controller in µMAX SWITCHING CONTROLLER, 330 kHz SWITCHING FREQ-MAX, PDSO10
High-Voltage, Step-Down DC-DC Controller in MAX 高压、降压型DC-DC控制器，µMAX封装
|
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| 2SC3675 |
900V/100mA High-Voltage Amplifier High-Voltage Switching Applications
High-Voltage Amp, High-Voltage Switching Applications
High-Voltage Amp High-Voltage Switching Applications
High-Voltage Amp/ High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC4634LS |
NPN Triple Diffused Planar Silicon Transistor 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1500V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4636LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1800V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4632LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1200V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| JHV3680 JHV36 JHV3612 JHV3616 JHV3620 JHV3624 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 54; IFSM (A): 1200; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
MICROSEMI[Microsemi Corporation]
|
| 2SC4493 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
|
SANYO
|
| 2SA1967 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
|
Sanyo
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2N6671 2N6672 2N6673 |
HIGH VOLTAGE NPN TYPES FOR OFF LINE POWER SUPPLIES AND OTHER HIGH VOLTAGE SWITCHING APPLICATIONS
|
List of Unclassifed Man...
ETC[ETC]
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