| PART |
Description |
Maker |
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| KTS1C1S250 |
Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode
|
TY Semiconductor Co., Ltd
|
| IRF7342D2 |
FETKY MOSFET & Schottky Diode
|
International Rectifier
|
| IRL3103D2PBF |
FETKY MOSFET & SCHOTTKY RECTIFIER
|
International Rectifier
|
| IRF7322D1 IRF7322D1TR |
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| IRF7807VD1PBF |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| IRF7807D2TR |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| IRF7421D1 IRF7421D1TR |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| IRF7353D2 IRF7353D2TR |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| IRF7353D2TRPBF |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| MMDFS2P102-D |
Power MOSFET 2 Amps, 20 Volts P-Channel SO-8, FETKY
|
ON Semiconductor
|
