PART |
Description |
Maker |
SDP10S30 SDB10S30SMD SDT10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-3 package Silicon Carbide Schottky Diodes - 10A diode in TO263 package Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon
|
30PUB60 |
Miniature Power Relay, 1 Form C, 10A 250VAC 10A 125VAC, 6A 277VAC DIODE - 3A 600V 27ns
|
NIEC[Nihon Inter Electronics Corporation]
|
STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1 ST |
N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?┬ower MOSFET N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET N沟道600V.65ohm - 10A条TO-220/FP/D2PAK/I2PAK/TO-247齐纳保护SuperMESH⑩功率MOSFET N-CHANNEL Power MOSFET N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESHPower MOSFET N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
|
STMicroelectronics N.V. ST Microelectronics
|
STGP10NC60H P10NC60H |
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH IGBT N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
STPSC406 STPSC406B-TR STPSC406D |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE 600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
STGD10NC60H GD10NC60H |
N-channel 10A - 600V - DPAK Very fast PowerMESH?/a> IGBT N-channel 10A - 600V - DPAK Very fast PowerMESH⑩ IGBT N-channel 10A - 600V - DPAK Very fast PowerMESH IGBT
|
STMicroelectronics
|
STGB10NB60S STGB10NB60ST4 STGP10NB60S_05 GB10NB60S |
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT N-CHANNEL 10A 600V TO-220/TP-220FP/DPAK PowerMESH"IGBT
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
6MBI10F-060 |
IGBT (600V 10A)
|
FUJI[Fuji Electric]
|
RJH60A83RDPD-A0-15 |
600V - 10A - IGBT
|
Renesas Electronics Corporation
|
STGD10NC60S |
10A - 600V Fast IGBT
|
ST Microelectronics
|
1MBC10D-060 1MBC10-060 1MBC10-06010 1MBG10D-060 |
600V / 10A Molded Package
|
Fuji Electric
|